Phonon-coupled electron tunneling in two- and three-dimensional tunneling configurations
نویسندگان
چکیده
منابع مشابه
Electron-electron interactions and two-dimensional-two-dimensional tunneling.
We derive and evaluate expressions for the dc tunneling conductance between interacting two-dimensional electron systems at non-zero temperature. The possibility of using the dependence of the tunneling conductance on voltage and temperature to determine the temperature-dependent electronelectron scattering rate at the Fermi energy is discussed. The finite electronic lifetime produced by electr...
متن کاملTunneling between parallel two-dimensional electron gases.
The tunneling between two parallel two-dimensional electron gases has been investigated as a function of temperature T , carrier density n, and the applied perpendicular magnetic field B. In zero magnetic field the equilibrium resonant lineshape is Lorentzian, reflecting the Lorentzian form of the spectral functions within each layer. From the width of the tunneling resonance the lifetime of th...
متن کاملTwo-electron elastic tunneling in low-dimensional conductors
We solve the Lippmann-Schwinger equation describing one-dimensional elastic scattering of preformed pairs ~e.g., bipolarons! off a short-range scattering center, and find the two-particle transmission through a thin potential barrier. While the pair transmission is smaller than the single-electron transmission in the strongcoupling limit, it is remarkably larger in the weak-coupling limit. We a...
متن کاملVertex-corrected tunneling inversion in electron-phonon mediated superconductors: Pb
The McMillan-Rowell tunneling inversion program, which extracts the electron-phonon spectral function aF(V) and the Coulomb pseudopotential m* from experimental tunneling data, is generalized to include the lowest-order vertex correction. We neglect the momentum dependence of the electron-phonon matrix elements, which is formally equivalent to using a local approximation. The perturbation theor...
متن کاملField-induced resonant tunneling between parallel two-dimensional electron systems
Resonant tunneling (RT) has by now been observed in a wide variety of semiconductor systems.’ The commonest configuration, the so-called double-barrier structure, typically consists of a single GaAs quantum well sandwiched between two AlGaAs barriers. Above and below the barriers are heavily doped GaAs regions serving as source and drain, Application of a dc bias voltage can induce RT via the e...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2000
ISSN: 0163-1829,1095-3795
DOI: 10.1103/physrevb.62.1984